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Michael
B. Santos Professor of Physics & Charles L. Blackburn Chair in
Engineering Physics (University of Oklahoma) Ph.D., Electrical Engineering (Princeton University 1992) B.S., Electrical Engineering and
Materials Science ( |
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Research Interests: The interests of my research group focus on the growth of narrow-gap semiconductors and device applications for these materials. We use molecular beam epitaxy to grow heterostructures based on InSb, InAs, and InxGa1-xAs. Because the bandgap of InSb is the smallest of all binary III-V compounds, two-dimensional electron systems in InSb quantum wells have a small effective mass, a large g-factor, and strong spin-orbit effects. The room-temperature mobility in these structures is higher than in quantum wells made of any other semiconductor. We are exploring ways to exploit this and other features in mesoscopic magnetoresistors, ballistic transport devices, and spin devices. These studies are being pursued in collaboration with Professor Murphy (magneto-transport), Professor Doezema (far infrared magneto-optics), and others. Since the operation of electronic devices depends on the quality of the heterostructure materials, my group makes use of materials analysis techniques including transmission electron microscopy, reflection high-energy electron diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and scanning probe microscopy. Some of these materials studies are performed in collaboration with Professor Johnson's group. |
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Current Research Funding: · NSF DMR, “InSb-Based Electron and Hole Systems for Charge and Spin Transport Experiments” · NSF MRSEC, “Center for Semiconductor Physics in Nanostructures” · NSF EPSCoR, “Oklahoma Nanotechnology Network” · Intel Corporation · Oklahoma Center for the Advancement of Science and Technology |
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III-V MBE at OU | Thin Films: Heteroepitaxial Systems | OU Physics and Astronomy
Sponsor: OU Physics and
Astronomy
Developer: M.B. Santos
Updated: November 25, 2008
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