Ian Sellers

Associate Professor



B.Eng. 1999 University of Liverpool

Ph.D. 2004 University of Sheffield



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Ph: (405) 325-6253

Office: Lin Hall 226


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Research Description

The development of epitaxial growth of semiconductors has enabled the control and manipulation of structures on an atomic scale. As such, it is now possible to investigate experimentally the fundamental properties of semiconductor nanostructures while creating interesting opportunities for next generation semiconductor devices. My research group at OU focuses on the investigation of novel materials and structures, predominantly for applications in next generation solar cells

The group has several funded programs to investigate the potential of quantum wells and quantum dots for terrestrial solar cell applications, in addition to programs with industrial partners at Amethyst Research Inc. (Ardmore, OK) and MiaSole Hi-Tech. Corporation (Santa Clara, CA) to develop high performance solar cells for space.

As well as our work with industry, we also collaborate with the groups of Santos (Physics), Wang (Chemical, Biological & Materials Engineering), and Saparov (Chemistry) here at OU, and have ongoing interactions with the University of Oxford and University College London in the UK, CRHEA-CNRS in France, as well as SUNY Buffalo and the Naval Research Laboratory in the United States.

Selected Publications

"Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbers," H. Esmaielpour, V. R. Whiteside, L. C. Hirst, J. G. Tischler, C. T. Ellis, M. P. Lumb, D. V. Forbers, R. J. Walters, I. R. Sellers, Progress in Photovoltaics: Research & Applications, 25(9), 782, (2017) DOI: 10.1002/pip.2890

"The effect of an InP cap layer on the photoluminescence of an InGaAsP/InAlAs quantum well heterostructure ," H. Esmaielpour, V. R. Whiteside, L. C. Hirst, J. G. Tischler, R. J. Walters, I. R. Sellers, Journal of Applied Physics, 121(23), 235301, (2017) DOI: 10.1063/1.4985614

"The effect and nature of N–H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs," C. R. Brown, N. J. Estes, V. R. Whiteside, B. Wang, K. Hossain, T. D. Golding, M. Leroux, M. Al Khalfioui, J. G. Tischler, C. T. Ellis, E. R. Glaser and I. R. Sellers, RSC Advances, 7, 25353 - 25361, (2017) DOI: 10.1039/C7RA02900D

"The role of defects and surface states in the carrier transport and non-linearity of the diode characteristics in PbS/ZnO quantum dot solar cells," Y. Cheng; M.C.D. Whitaker, R. Makkia, S. Cocklin, V.R. Whiteside, L.A. Bumm, E. Adcock-Smith, K.P. Roberts, P. Hari, I.R. Sellers, ACS Applied Materials & Interfaces, 9(15), 13269-13277, (2017) DOI: 10.1021/acsami.7b00141

"Suppression of phonon-mediated hot carrier relaxation in type-II InAs/AlAsSb quantum wells: a practical route to hot carrier solar cells," H. Esmaielpour, V. R. Whiteside, J. Tang, S. Vijeyaragunathan, T. D. Mishima, S. Cairns, M. B. Santos, B. Wang, Ian R. Sellers, Progress in Photovoltaics: Research & Applications, 24, 591, (2016) DOI: 10.1002/pip.276

"Invesitgation of InAs/GaAs1-xSbx quantum dots for applications in intermediate band solar cells," Y. Cheng, M. Fukuda, V. R. Whiteside, M. C. Debnath, P. J. Vallely, T. D. Mishima, M. B. Santos, K. Hossain, S. Hatch, H. Y. Liu, and I. R. Sellers, Solar Energy Materials & Solar Cells, 147, 94, (2016)

"Improved performance in GaInNAs solar cells by hydrogenation," M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux and M. Al Khalfioui, Applied Physics Letters, 106(14), 141904, (2015)

See more publications.

Research Group

Vincent R. Whiteside, Post Doc
Hadi Afshari, Graduate Student
Collin Brown, Graduate Student
Yang Cheng, Graduate Student