News

Jun 02

OU student named astronaut scholar

HDL student Matthew Peters has been named one of the 2017/18 Astronaut Scholars of the Astronaut Scholarship Foundation (ASF). This scholarship recognizes an elite group of...

May 22

Alison Roeth Named Goldwater Scholar

University of Oklahoma honors student Alison Roeth has been named a 2017 Goldwater Scholar. The prestigious scholarship is awarded on the basis of potential and intent...

May 05

Graduate student wins NASA award

Disk Detective team lead by graduate student Steven Silverberg has been awarded NASA's Robert H. Goddard Exceptional Achievement Outreach Award. Disk Detective ...

Apr 17

HLD faculty receives OU Presidential award

Professor Bruno Uchoa was recently awarded with the Ted and Cuba Webb Presidential Professorship. The Presidential Professorships were established to recognize those faculty members...

Apr 13

HLD Faculty receive Patent Award

In a recent tribute to OU faculty, HLD faculty Mike Santos and Matt Johnson received a Patent Award for their work in helping develop a...

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Events

Calendar
Colloquium
HEP Seminar
CMP Seminar
Astronomy Journal Club
CMP Journal Club
Faculty Research Seminar
Public Lecture
Special Event
Star Party

CMP Journal Club

Jul 05, 2017 12:00 pm

Nielsen Hall 103 - Alex Kerr

Colloquium

Sep 07, 2017 4:00 pm

Nielsen Hall 170 - John Wisniewski
TBD

Colloquium

Sep 28, 2017 4:00 pm

Nielsen Hall 170 - Alberto Marino
TBD

Colloquium

Oct 05, 2017 4:00 pm

Nielsen Hall 170 - Giles Eperon
TBD

Colloquium

Nov 02, 2017 4:00 pm

Nielsen Hall 170 - Sami Mitra
TBA

More Events...
Research Figure

Featured Research: Designing Quantum Spin Liquids

Mott insulators are materials that would be naively expected to conduct electricity, but nevertheless behave as insulators due to the presence of very strong electronic interactions. In a recent work published in Scientific Reports, graduate student Xu Dou and Prof. Bruno Uchoa have shown that Coulomb impurity lattices on the surface of gapped honeycomb substrates, such as graphene on SiC, can be used to simulate a special class of Mott insulators described by SU(4)…

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