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An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs1–xSbx Quantum Dot Solar Cells

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  1. "An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs1–xSbx Quantum Dot Solar Cells ," Y.Cheng, A. Meleco, A. J. Roeth, V. R. Whiteside, M. C. Debnath, T. D . Mishima, M. B. Santos, S. Hatch, H. Liu and I. R. Sellers, IEEE Journal of Photovoltaics, PP, 1-6, (2017).

  2. "The effect of an InP cap layer on the photoluminescence of an InxGa1–xAs1–yPy/InzAl1– zAs quantum well heterostructure ," H. Esmaielpour, V. R. Whiteside, L. C. Hirst, J. G. Tischler, R. J. Walters, and I. R. Sellers, Journal of Applied Physics, 121, 235301, (2017).

  3. "The effect and nature of N–H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs," C. R. Brown, N. J. Estes, V. R. Whiteside, B. Wang, K. Hossain, T. D. Golding, M. Leroux, M. Al Khalfioui, J. G. Tischler, C. T. Ellis, E. R. Glaser and I. R. Sellers, RSC Advances, 7, 25353 - 25361, (2017).

  4. "Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbers," H. Esmaielpour, V. R. Whiteside, L. C. Hirst, J. G. Tischler, C. T. Ellis, M. P. Lumb, D. V. Forbes, R. J. Walters, and I. R. Sellers, Progress in Photovoltaics: Research and Applications, doi: 10.1002/pip.2890, (2017).

  5. "Role of Defects and Surface States in the Carrier Transport and Nonlinearity of the Diode Characteristics in PbS/ZnO Quantum Dot Solar Cells," Y. Cheng, M. C. D. Whitaker, R. Makkia, S. Cocklin, V. R. Whiteside, L. A. Bumm, E. Adcock-Smith, K. P. Roberts, P. Hari, and I. R. Sellers, ACS Applied Materials & Interfaces, Article ASAP, doi: 10.1021/acsami.7b00141, (2017).

  6. "Suppression of phonon-mediated hot carrier relaxation in type-II of InAs/AlAsxSb1−x quantum wells: a practical route to hot carrier solar cells," H. Esmaielpour, V. R. Whiteside, J. Tang, S. Vijeyaragunathan, T. D. Mishima, S. Cairns, M. B. Santos, B. Wang, and I. R. Sellers, Progress in Photovoltaics: Research and Applications 24 (5), 591 (2016).

  7. "Investigation of InAs/GaAs1−xSbx quantum dots for applications in intermediate band solar cells," Y. Cheng, M. Fukuda, V. R. Whiteside, M. C. Debnath, P. J. Vallely, T. D. Mishima, M. B. Santos, K. Hossain, S. Hatch, H. Y. Liu, and I. R. Sellers,  Solar Energy Materials and Solar Cells 147, 94 (2016).
  8. Improved performance in GaInNAs solar cells by hydrogen passivation, M. Fukuda, V. R. Whiteside, J. C. Keay, A. Meleco, I. R. Sellers, K. Hossain, T. D. Golding, M. Leroux, and M. Al Khalfioui, Applied Physics Letters, 106, 141904 (2015)

  9. Effects of localization on hot carriers in InAs/AlAs x Sb1-x quantum wells, J. Tang, V. R. Whiteside, H. Esmaielpour, S. Vijeyaragunathan, T. D. Mishima, M. B. Santos, and I. R. Sellers, Applied Physics Letters, 106, 061902 (2015)

  10. Probing the nature of carrier localization in GaInNAs epilayers by optical methods, Y. Tsai, B. Barman, T. Scrace, G. Lindberg, M. Fukuda, V. R. Whiteside, J. C. Keay, M. B. Johnson, I. R. Sellers, M. Al Khalfioui, M. Leroux, B. A. Weinstein, and A. Petrou, Applied Physics Letters, 103, 012104 (2013)

  11. Carrier-Multiplication in bulk InN, S. A. Jensen, J. Versluis, E. Cānovas, J. J. H. Pijpers, I. R. Sellers and M. Bonn, Applied Physics Letters, 101, 222113 (2012)

  12. Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing, I. R. Sellers, WS. Tan, K. Smith, S. Hooper, S. Day and M. Kauer, Applied Physics Letters, 99,151111 (2011).