III-V Molecular Beam Epitaxy at the University of Oklahoma

The III-V MBE Group is led by Michael Santos, a Professor of Physics. Research on InSb-based heterostructures began in 1993 with the installation of an Intevac Gen II MBE system. Samples can be transferred under ultrahigh vacuum conditions between four chambers: (1) a growth chamber for III-V materials, (2) a growth chamber for IV-VI and fluoride materials, (3) a surface analysis chamber equipped for Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy, and (4) a chamber for scanning probe microscopy.

The III-V growth chamber is dedicated to materials formed from In, Ga, Al, As, and Sb. Si and Be are used as n-type and p-type dopants, respectively. Our main focus is the growth of InSb quantum wells with Al_xIn_1-xSb barriers remotely doped with Si. Such structures enable the study of the low-temperature properties of two-dimensional electron systems with a low-effective mass, a high g-factor, and a non-parabolic dispersion relation. The unusual electronic properties of InSb quantum wells at room temperature can potentially lead to improved field-effect transistors, magnetoresistive sensors, and spin devices. We also grow In_xGa_1-xAs/In_xAl_1-xAs and InAs/GaSb/AlSb structures for electronic and photonic applications, respectively.

Projects | Personnel | Publications

Sponsor: OU Physics and Astronomy
Developer: M.B. Santos
Updated: November 25, 2008
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