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Publications Co-authored by the III-V MBE Group

InAs-Related Publications:

104. “Interband cascade infrared photodetectors,” Zhaobing Tian, Zhihua Cai, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos, Matthew B. Johnson, and J.F. Klem, Proc. SPIE 7608, 76081X (2010).

103. “InAs-based plasmon-waveguide interbband cascade lasers,” Zhaobing Tian, Chen Chen, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos, Joel C. Keay, Matthew B. Johnson, and J. F. Klem, Proc. SPIE 7616, 76161B (2010).

102. “Interband cascade infrared photodetectors,” Zhaobing Tian, Zhihua Cai, Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos, Matthew B. Johnson, and J.F. Klem, Proc. SPIE 7608, 76081X (2010).

101. “Interband Cascade Photovoltaic Devices,” Rui Q. Yang, Zhaobing Tian, J.F. Klem, Tetsuya D. Mishima, Michael B. Santos, and Matthew B. Johnson, Applied Physics Letters 96, 063504 (2010).

100. “Plasmon-waveguide interband cascade lasers near 7.5 microns,” Z. Tian, R.Q. Yang, T. D. Mishima, M.B. Santos, and M.B. Johnson, Photonics Technology Letters 21, 1588 (2009).

99.    “InAs-based interband cascade lasers near 6 microns,” Zhaobing Tian and Rui Q. Yang, Tetsuya D. Mishima, Michael B. Santos, Robert T. Hinkey, Mark E. Curtis, and Matthew B. Johnson, Electronics Letters 45, 48 (2009).

InxGa1-xAs-Related Publications:                 

98.    “Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors,” Feng Zhu, Han Zhao, I. Ok, H. S. Kim, J. Yum, Jack C. Lee, Niti Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Electrochemical and Solid-State Letters 12, H131 (2009). 

97.    “A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer,” Feng Zhu, Han Zhao, I. Ok, H. S. Kim, J. Yum, Jack C. Lee, Niti Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Applied Physics Letters 94, 013511 (2009).

96.    “A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer,” Hyoung-Sub Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi, N. Goel, W. Tsai, C. K. Gaspe, and M. B. Santos, Applied Physics Letters 93, 062111 (2008).

95.    “In0.53Ga0.47As based MOS capacitors with ALD ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1 nm,” Niti Goel, Prashant Majhi, H. Wen, Michael Santos, Serge Oktyabrsky, Vadim Tokranov, Rama Kambhampati, Richard Moore, Feng Zhu, Jack Lee, Wilman Tsai, Applied Physics Letters 92, 222904 (2008).

94.    “Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer, “ InJo Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Domingo Garcia, Prashant Majhi, N. Goel and W. Tsai, C. Gaspe, M.B. Santos, and Jack C. Lee, Applied Physics Letters 92, 202903 (2008).

93.    “Band offsets between amorphous LaAlO3 film on In0.53Ga0.47As,” N. Goel, W. Tsai, C. M. Garner, Y. Sun, P. Pianetta, M. Warusawithana, D.G. Schlom, H. Wen, C. Gaspe, J.C. Keay, M.B. Santos, L.V. Goncharova, E. Garfunkel, T. Gustafsson, Applied Physics Letters 91, 113515 (2007).

92.    “High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric,” N. Goel, P. Majhi , W. Tsai , M. Warusawithana , D.G. Schlom, M.B. Santos, J. Harris, Y. Nishi, Applied Physics Letters 91, 093509 (2007).

InSb-Related Publications:

91.    “Impact of structural defects upon electron mobility in InSb quantum wells,” T.D. Mishima and M.B. Santos, Journal of Applied Physics (in press).

90.    “Intersubband Absorption by Electrons in InSb Quantum Wells with an In-Plane Magnetic Field,” M.B. Santos, S.D. Lowe, T.D. Mishima, R.E. Doezema, L.C. Tung, and Y-J. Wang, Proceedings of the 30th International Conference on the Physics of Semiconductors (in press).

89.    “Effect of Strain and Confinement on the Effective Mass of Holes in InSb Quantum Wells,” C.K. Gaspe, M. Edirisooriya, T.D. Mishima, P.A.R. Dilhani Jayathilaka, R.E. Doezema, S.Q. Murphy, M.B. Santos, L.C. Tung and Y-J. Wang, J. Vac. Sci. Technol. B 29, 03C110 (2011).

88.    “Dynamic Nuclear Polarization and Nuclear Magnetic Resonance in the Simplest Pseudospin Quantum Hall Ferromagnet,” H. W. Liu, K. F. Yang, T. D. Mishima, M. B. Santos, Y. Hirayama, Physical Review B 82 (Rapid Comm.), 241304 (2010). Editor’s Choice

87.    “Dislocation-filtering AlInSb buffer layers for InSb quantum wells—Analysis by high-tilt bright-field and dark-field TEM,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Physica E 42, 2777 (2010).

86.    “Spin and phase coherence in quasi-1D InSb wires under strong spin–orbit interaction,” R.L. Kallaher, J.J. Heremans, N. Goel, S.J. Chung, and M.B. Santos, Physica E 42, 971 (2010).

85.    “Cyclotron resonance in p-doped InSb quantum wells,” M.B. Santos, M. Edirisooriya, T.D. Mishima, C.K. Gaspe, J. Coker, R.E. Doezema, X. Pan, G.D. Sanders, C.J. Stanton, L.C. Tung, and Y-J. Wang, Physics Procedia 3, 1201 (2010).

84.    “Micro-twin defects in InSb/AlInSb layers grown on (001) GaAs- Application of the < 116> directional analysis,” T.D. Mishima and M.B. Santos, Physics Procedia 3, 1373 (2010).

83.    “Oscillatory quantum interference effects in narrow-gap semiconductor heterostructures,” R.B. Lillianfeld, R.L. Kallaher, J.J. Heremans, H. Chen, N. Goel, S.J. Chung, M.B. Santos, W. Van Roy, and G. Borghs, Physics Procedia 3, 1231 (2010).

82.    “Probe of intersubband relaxations of photo-excited carriers and spins in InSb-based quantum wells,” M. Bhowmick, R.N. Kini, K. Nontapot, G.A. Khodaparast, N. Goel, S.J. Chung, T.D. Mishima, and M.B. Santos, Physics Procedia 3, 1161 (2010).

81.    “Spin-orbit interaction determined by antilocalization in an InSb quantum well,” R.L. Kallaher, J.J. Heremans, N. Goel, S.J. Chung, and M.B. Santos, Physical Review B 81, 075303 (2010).

80.    “Spin and phase coherence lengths in n-InSb quasi-one-dimensional wires,” R.L. Kallaher, J.J. Heremans, N. Goel, S.J. Chung, and M.B. Santos, Physical Review B 81, 035335 (2010).

79.    “Probe of coherent and quantum states in narrow-gap semiconductors in the presence of strong spin-orbit coupling,” Giti A. Khodaparast, Mithun Bhowmick, Matthew Frazier, Rajeev N. Kini, Kanokwan Nontapot, Tetsuya D. Mishima, Michael B. Santos, and Bruce W. Wessels, Proc. SPIE 7608, 76080O (2010).

78.    “Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy,” M.C. Debnath, T.D. Mishima, M.B. Santos, K. Hossain, and O.W. Holland, Journal of Vacuum Science and Technology B 27, 2453 (2009).

77.    “Photoinduced spin-polarized current in InSb-based structures,” M. Frazier, J.G. Cates, J.A. Waugh, J.J. Heremans, M.B. Santos, X. Liu, and G.A. Khodaparast, Journal of Applied Physics 106, 103513 (2009).

76.    “Comprehensive doping and temperature studies of spin relaxation in InSb,” Dorel Guzun, Eric Decuir Jr., Vasyl Kunets, Yu Mazur, Gregory J. Salamo, P.A.R. Dilhani Jayathilaka, Sheena Murphy, Tetsuya Mishima, and Michael Santos, Applied Physics Letters 95, 241903 (2009).

75.    “InSb Quantum-Well Structures for Electronic Device Applications,” M. Edirisooriya, T.D. Mishima, C.K. Gaspe, K. Bottoms, R.J. Hauenstein, and M.B. Santos, Journal of Crystal Growth 311, 1972 (2009).

74.    “InSb quantum well based micro-Hall devices: potential for pT-detectivity,” Vas. P. Kunets, S. Easwaran, W. T. Black, D. Guzun, Yu. I. Mazur, and G. J. Salamo, N. Goel, T. D. Mishima, and M. B. Santos, IEEE Transactions on Electron Devices 56, 683 (2009).

73.    “Effect of Structural Defects on Electron Mobility in InSb Quantum Wells Grown on GaAs (001) Substrates,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Phys. Stat. Sol. (c) 5, 2775 (2008).

72.    “Magnetoexcitons in Strained InSb Quantum Wells,” W. Gempel, X. Pan, T. Kasturiarachchi, G.D. Sanders, M. Edirisooriya, T.D. Mishima, R.E. Doezema, C.J. Stanton, and M.B. Santos, Springer Proceedings in Physics 119, 213 (2008). 

71.    “Measurement of the Dresselhaus and Rashba spin-orbit coupling via weak anti-localization in InSb quantum wells,” A.R. Dedigama, D. Jayathilaka, S.H. Gunawardana, S.Q. Murphy, M. Edirisooriya, N. Goel, T.D. Mishima and M.B. Santos, Springer Proceedings in Physics 119, 35 (2008).

70.    “Control and Probe of Carrier and Spin Relaxations in InSb Based Structures,” G.A. Khodaparast, R.N. Kini, K. Nontapot, M. Frazier, E.C. Wade, J.J. Heremans, S.J. Chung, N. Goel, M.B. Santos, T. Wojtowicz, X. Liu, and J.K Furdyna, Springer Proceedings in Physics 119, 15 (2008).

69.    “Reduction of micro-twin defects for high-electron-mobility InSb quantum wells,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Applied Physics Letters 91, 062106 (2007).

68.    “Effect of Al composition on filtering of threading dislocations by AlxIn1-xSb/AlyIn1-ySb heterostructures grown on GaAs (001),” M. Edirisooriya, T.D. Mishima, and M.B. Santos, Journal of Vacuum Science and Technology B25, 1063 (2007).

67.    “Spin-Dependent Transverse Magnetic Focusing in InSb- and InAs-based Heterostructures,” J.J. Heremans, Hong Chen, M.B. Santos, N. Goel, W. Van Roy, and G. Borghs, AIP Conference Proceedings 893, 1287 (2007).

66.    “Exciton Determination of Strain Parameters in InSb/AlxIn1-xSb Quantum Wells”, T. Kasturiarachchi, F. Brown, N. Dai, G.A. Khodaparast, R.E. Doezema, N. Goel, S.J. Chung and M.B. Santos,  Journal of Vacuum Science and Technology B24, 2429 (2006).

65.    “Structural Defects in InSb Quantum Wells Grown on GaAs (001) Substrates via Al0.09In0.91Sb/GaSb-AlSb Strained Layer Superlattice/AlSb/GaSb Buffer Layers,” T.D. Mishima, M. Edirisooriya and M.B. Santos, Materials Research Society Symposium Proceedings 891, 0891-EE01-11 (2006).  

64.    “Current focusing in InSb heterostructures,” A.R. Dedigama, D. Deen, S.Q. Murphy, N. Goel, J. Keay, M.B. Santos, K. Suzuki, S. Miyashita, and Y. Hirayama, Physica E 34, 647 (2006).

63.    “Mesoscopic spin-dependent reflection experiments on InSb- and InAs-based heterostructures,” H. Chen, J. A. Peters, Yue Pan, J. J. Heremans, N. Goel, S. J. Chung, M. B. Santos, W. Van Roy and G. Borghs, Physica E 34, 374 (2006).

62.    “Localization and antilocalization in InSb and InAs antidot lattices,” J. A. Peters, H. Chen, Yue Pan, Yafei Guan, J. J. Heremans, N. Goel, S. J. Chung, M. B. Santos, W. Van Roy and G. Borghs, Physica E 34, 363 (2006).

61.    “Photoluminescence study of InSb/AlxIn1-xSb quantum wells,” X.H. Zhang, N. Dai, F.H. Zhao, Z.S. Shi, R.E. Doezema, N. Goel, S.J. Chung, and M.B. Santos, Applied Physics Letters 89, 021907 (2006).

60.    “Dislocation filtering by AlxIn1-xSb/ AlyIn1-ySb interfaces for InSb-based devices grown on GaAs(001) substrates,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Applied Physics Letters 88, 191908 (2006).

59.    “Determination of deformation potentials in strained InSb quantum wells,” T. Kasturiarachchi, F. Brown, N. Dai, G.A. Khodaparast, R.E. Doezema, S.J. Chung, and M.B. Santos, Applied Physics Letters 88, 171901 (2006).

58.    “Dislocation filtering at the interfaces between AlxIn1-xSb and AlyIn1-ySb layers,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Physica B 376-377, 591 (2006).

57.    “Spin-spin subband Landau-level coupling in InSb quantum wells,” R.C. Meyer, X.H. Zhang, T. Kasturiarachchi, N. Goel, R.E. Doezema, M.B. Santos, and Y.J. Wang, Narrow Gap Semiconductors 2005, edited by Kono & Lιotin, IOP Conference Series 187, (Taylor & Francis, 2005), 555.

56.    “Time resolved studies of magnetic and non-magnetic narrow-gap semiconductors,” G.A. Khodaparast, K. Nontapot, A. Gifford, S.J. Chung, N. Goel, M.B. Santos, T. Wojtowicz, X. Liu, and J.K. Furdyna, Narrow Gap Semiconductors 2005, edited by Kono & Lιotin, IOP Conference Series 187, (Taylor & Francis, 2005), 504.

55.    “Mesoscopic spin-dependent ballistic transport in InSb- and InAs-based heterostructures,” H. Chen, J.A. Peters, Y. Pan, Y. Guan, J.J. Heremans, N. Goel, S.J. Chung, M.B. Santos, W.V. Roy, and G. Borghs, Narrow Gap Semiconductors 2005, edited by Kono & Lιotin, IOP Conference Series 187, (Taylor & Francis, 2005), 455.

54.    “Molecular beam epitaxy and electronic properties of InSb heterostructures,” N. Goel, T.D. Mishima, J.C. Keay, M.B. Johnson, and M.B. Santos, Recent Res. Devl. Crystal Growth 4, 381 (2005).

53.    “Highly sensitive micro-Hall devices based on Al0.12In0.88Sb/InSb heterostructures,” Vas. P. Kunets, W.T. Black, Yu. I. Mazur, D. Guzun, G.J. Salamo, N. Goel, T.D. Mishima, D.A. Deen, S.Q. Murphy, and M.B. Santos, Journal of Applied Physics, 98, 014506 (2005).

52.    “Effect of microtwin defects on InSb quantum wells,” T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B. Johnson, and M.B. Santos, Journal of Vacuum Science and Technology B23, 1171 (2005).

51.    “Spin polarized and ballistic transport in InSb/InAlSb heterostructures,” H. Chen, J.A. Peters, J.J. Heremans, N. Goel, S.J. Chung, and M.B. Santos, AIP Conference Proceedings 772, 1394 (2005).

50.    “Quantum Hall ferromagnetism in InSb heterostructures,” J.C. Chokomakoua, N. Goel, S.J. Chung, M.B. Santos, M.B. Johnson, and S.Q. Murphy, AIP Conference Proceedings 772, 533 (2005).

49.    “Spin-flip subband-Landau-level coupling in InSb heterostructures,” X.H. Zhang, R.C. Meyer, T. Kasturiarachchi, N. Goel, R.E. Doezema, S.J. Chung, M.B. Santos, and Y.J. Wang, AIP Conference Proceedings 772, 405 (2005).

48.    “Ballistic transport in InSb mesoscopic structures,” N. Goel, J. Graham, J.C. Keay, K. Suzuki, S. Miyashita, M.B. Santos, Y. Hirayama, Physica E26, 455 (2005).

47.    “Spin-Polarized Reflection of Electrons in a Two-Dimensional Electron System,” Hong Chen, J.J. Heremans, J.A. Peters, J.P. Dulka, A.O. Govorov, N. Goel, S.J. Chung, and M.B. Santos, Applied Physics Letters 86, 032113 (2005).

46.    “Spectroscopy of Rashba spin splitting in InSb quantum wells,” G.A. Khodaparast, R.E. Doezema, S.J. Chung, K.J. Goldammer, and M.B. Santos, Physical Review B70, 155322 (2004).

45.    “Effect of buffer layer on InSb quantum wells grown on GaAs (001) substrates,” T.D. Mishima and M.B. Santos, Journal of Vacuum Science and Technology B22, 1472 (2004).

44.    “Ising quantum Hall ferromagnetism in InSb-based two-dimensional electronic systems,” J.C. Chokomakoua, N. Goel, S.J. Chung, M.B. Santos, J.L. Hicks, M.B. Johnson and S.Q. Murphy, Physical Review B69, 235315 (2004).

43.    “Ballistic transport in InSb/AlInSb antidot lattices,” Hong Chen, J.J. Heremans, J.A. Peters, N. Goel, S.J. Chung, and M.B. Santos, Applied Physics Letters 84, 5380 (2004).

42.    “Structural defects in InSb/AlxIn1-xSb quantum wells grown on GaAs (001),” T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B. Johnson, and M.B. Santos, Physica E21, 770 (2004).

41.    “Effect of temperature on ballistic transport in InSb quantum wells,” N. Goel, K. Suzuki, S. Miyashita, S.J. Chung, M.B. Santos, and Y. Hirayama, Physica E21, 761 (2004).

40.    “Effect of structural defects on InSb/AlxIn1-xSb quantum wells grown on GaAs (001),” T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B. Johnson, and M.B. Santos, Physica E20, 260 (2004).

39.    “Ballistic Transport in InSb Quantum Wells at High Temperature,” N. Goel,  K. Suzuki, S. Miyashita, S.J. Chung, M.B. Santos, and Y. Hirayama, Physica E20, 251 (2004).

38.    “Spin Effects in InSb Quantum Wells,” G.A. Khodaparast, R.C. Meyer, X.H. Zhang, T. Kasturiarachchi, R. E. Doezema, S.J. Chung, N. Goel, and M. B. Santos, and Y.J. Wang, Physica E20, 386 (2004).

37.    “Application of Terrahertz Quantum Cascade Lasers to Semiconductor Cyclotron Resonance,” D.C. Larrabee, G.A. Khodaparast, F.K. Tittel, J. Kono, M. Rochat, L. Ajili, H. Willenberg, J. Faist, K. Ueda, Y. Nakajima, M. Nakai, S. Sasa, M. Inoue, S.J. Chung, and M.B. Santos, Optics Letters 29, 122 (2004).

36.    “Anisotropic Structural and Electronic Properties of InSb/AlxIn1-xSb Quantum Wells Grown on GaAs (001) Substrates,” T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B. Johnson, and M.B. Santos, Journal of Crystal Growth 251, 551 (2003).

35.    “Relaxation of quasi-two-dimensional electrons in a quantizing magnetic field probed by time-resolved cyclotron resonance,” G.A. Khodaparast, D.C. Larrabee, J. Kono, S. King, S.J. Chung, and M.B. Santos, Physical Review B67, 35307 (2003).

34.    “Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording,” S.A. Solin, D.R. Hines, A.C.H. Rowe, J.S. Tsai, Yu. A. Pashkin, S.J. Chung, N. Goel, and M.B. Santos, Applied Physics Letters 80, 4012 (2002).

33.    “Mobility anisotropy in InSb/AlInSb single quantum wells,” M.A. Ball, J.C. Keay, S.J. Chung, M.B. Santos, and M.B. Johnson, Applied Physics Letters 80, 2138 (2002).

32.    “Room Temperature Extraordinary Magnetoresistance of Non-Magnetic Narrow-Gap Semiconductor/Metal Composites: Application to Read-Head Sensors for Ultra High Density Magnetic Recording,” S.A. Solin, D.R. Hines, J.S. Tsai, Yu. A. Pashkin, S.J. Chung, N. Goel and M.B. Santos, IEEE Transactions on Magnetics 38, 89 (2002).

31.    “Temperature dependence of exciton linewidths in InSb quantum wells,” N. Dai, F. Brown, R.E. Doezema, S.J. Chung, and M.B. Santos, Physical Review B63, 115321 (2001).

30.    “Spin resonance probe of zero-field spin splitting in InSb quantum wells,” G.A. Khodaparast, R.E. Doezema, S.J. Chung, K.J. Goldammer, and M.B. Santos, Proc. NGS 10, IPAP Conf. Series 2, 245 (2001).

29.    “Excitons in InSb quantum wells: A multi-use tool,” N. Dai, F. Brown, G.A. Khodaparast, R.E. Doezema, and M.B. Santos in 4th International Conference on Thin Film Physics and Applications, Proceedings of SPIE 4086, 38 (2000).

28.    “Band Offset Determination in the Strained-Layer InSb/AlxIn1-xSb System,” N. Dai, G.A. Khodaparast, F. Brown, R.E. Doezema, S.J. Chung, and M.B. Santos, Applied Physics Letters 76, 3905 (2000).

27.    “Improving the Surface Morphology of InSb Quantum-Well Structures on GaAs Substrates,” S.J. Chung, M.A. Ball, S.C. Lindstrom, M.B. Johnson, and M.B. Santos, Journal of Vacuum Science and Technology B18, 1583 (2000).

26.    “Electronic Characterization of InSb Quantum Wells,” S. J. Chung, N. Dai, G.A. Khodaparast, J. Hicks, K.J. Goldammer, F. Brown, W. K. Liu, R. E. Doezema, S. Q. Murphy, and M. B. Santos, Physica E7, 809 (2000).

25.    “Studies of the Integer Quantum Hall to Quantum Hall Insulator Transition in InSb Based 2DESs,” S.Q. Murphy, J.L. Hicks, W.K. Liu, S.J. Chung, K.J. Goldammer, and M.B. Santos, Physica E6, 293 (2000).

24.    "A study of factors limiting electron mobility in InSb quantum wells," S.J. Chung, K.J. Goldammer, S.L. Lindstrom, M.B. Johnson and M.B. Santos, Journal of Vacuum Science and Technology B17, 1151 (1999).

23.    "High-mobility electron systems in remotely-doped InSb quantum wells," K.J. Goldammer, S.J. Chung, W.K. Liu, M.B. Santos, J.L. Hicks, S. Raymond, and S.Q. Murphy, Journal of Crystal Growth 201/202, 753 (1999).

22.    "Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb," N. Dai, F. Brown, R.E. Doezema, S.J. Chung, K.J. Goldammer, and M.B. Santos, Applied Physics Letters 73, 3132 (1998).

21.    "Observation of excitonic transitions in InSb quantum wells," N. Dai, F. Brown, P. Barsic, G.A. Khodaparast, R.E. Doezema, M.B. Johnson, S.J. Chung, K.J. Goldammer, and M.B. Santos, Applied Physics Letters 73, 1101 (1998).

20.    “Surface segregation and compensation of Si in delta-doped InSb and AlxIn1-xSb grown by molecular beam epitaxy," W.K. Liu, K.J. Goldammer, and M.B. Santos, Journal of Applied Physics 84, 205 (1998).

19.    "Electrical properties of InSb quantum wells remotely-doped with Si," K.J. Goldammer, W.K. Liu, G.A. Khodaparast, S.C. Lindstrom, M.B. Johnson, R.E. Doezema and M.B. Santos, Journal of Vacuum Science and Technology B16, 1367 (1998).

18.    "MBE growth and characterization of InSb/AlxIn1-xSb strained layer structures," M.B. Santos, W.K. Liu, R.J. Hauenstein, K.J. Goldammer, W. Ma, and M.L. O’Steen, Materials Research Society Symposium Proceedings 450, 97 (1997).

17.    "Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers," W.K. Liu, J. Winesett, Weiluan Ma, Xuimei Zhang, and M.B. Santos, Journal of Applied Physics 81, 1708 (1997).

16.    "Large mismatch heteroepitaxy of InSb on Si(111) substrates using CaF2 buffer layers," W.K. Liu, X.M. Fang, J. Winesett, Weiluan Ma, Xuemei Zhang, M.B. Santos, and P.J. McCann, Journal of Crystal Growth 175/176, 853 (1997).

15.    "MBE growth and characterization of AlxIn1-xSb/InSb quantum wells," W.K. Liu, Xuemei Zhang, Weiluan Ma, J. Winesett, and M.B. Santos, Journal of Vacuum Science and Technology B14, 2339 (1996).

14.    "Mechanism for oxide desorption from InSb(001) Substrates: A RHEED, XPS, AES and SEM Study," W.K. Liu and M.B. Santos, Journal of Vacuum Science and Technology B14, 647 (1996).

13.    "Cyclotron resonance and Hall effect studies of ultra-high mobility InSb films," Y. Zhang, J. Su, J.E. Furneaux, W.K. Liu, M.B. Santos, and R.E. Doezema, Narrow Gap Semiconductors 1995, edited by J.L. Reno, (IOP Publishing Ltd., 1995), 374.

12.    "RHEED and XPS study of oxide desorption from InSb(100) substrates", W.K. Liu and M.B. Santos, Narrow Gap Semiconductors 1995, edited by J.L. Reno, (IOP Publishing Ltd., 1995), 199.

11.    "RHEED studies of the surface reconstructions of InSb(001) during molecular beam epitaxy," M.B. Santos and W.K. Liu, Narrow Gap Semiconductors 1995, edited by J.L. Reno, (IOP Publishing Ltd., 1995), 194.

10.    "Surface reconstructions of InSb(001) during molecular beam epitaxy," W.K. Liu and M.B. Santos, Surface Science 319, 172 (1994).

Collaborative Publications with P.J. McCann's Group:

9.      "Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111)," X.M. Fang, I-Na Chao, B.N. Strecker, P.J. McCann, S. Yuan, W.K. Liu, and M.B. Santos, Journal of Vacuum Science and Technology B16, 1459 (1998).

8.      "MBE growth of PbEuSe on CaF2/Si(111)," X.M. Fang, I-Na Chao, B.N. Strecker, P.J. McCann, Shu Yuan, W.K. Liu, and M.B. Santos, Proceedings of the 8th International Conference on Narrow Gap Semiconductors, edited by S.C. Shen, D.Y. Tang, G.Z. Zheng, and G. Bauer, (World Scientific, 1998), 101.

7.      "XPS study of Pb(Se,Te)/CaF2 interfaces grown on Si by MBE," X.M. Fang, B.N. Strecker, P.J. McCann, W.K. Liu, and M.B. Santos, Materials Research Society Symposium Proceedings 450, 457 (1997).

6.      "Optical characterization of Eu-doped CaF2 thin films grown on Si by MBE," X.M. Fang, T. Chatterjee, P.J. McCann, W.K. Liu, M.B. Santos, W. Shan, and J.J. Song, Materials Research Society Symposium Proceedings 446, 129 (1997).

5.      "Observation of RHEED intensity oscillations during CaF2 MBE," W. K. Liu, X.M. Fang, P.J. McCann, and M.B. Santos, Materials Research Society Symposium Proceedings 441, 51 (1997).

4.      "MBE growth of PbSe/CaF2/Si(111) heterostructures," P.J. McCann, X.M. Fang, W.K. Liu, B.N. Strecker, and M.B. Santos, Journal of Crystal Growth 175/176, 1057 (1997).

3.      "Initial growth of CaF2 and BaF2/CaF2 on Si(110) during molecular beam epitaxy," W.K. Liu, X.M. Fang, Wei-Li Yuan, M.B. Santos, T. Chatterjee, P.J. McCann, and E.A. O’Rear, Journal of Crystal Growth 167, 111 (1996).

2.      "MBE growth of Eu-doped CaF2 and BaF2 on Si", X.M. Fang, W.K. Liu, W. Shan, T. Chatterjee, P.J. McCann, M.B. Santos, and J.J. Song, Journal of Vacuum Science and Technology B14, 2267 (1996).

1.        "Eu-doped CaF2 grown on Si(100) by molecular beam epitaxy", X.M. Fang, T. Chatterjee, P.J. McCann, W.K. Liu, M.B. Santos, W. Shan, and J.J. Song, Applied Physics Letters 67, 1891 (1995).

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