Department
of Physics
Rensselaer
Polytechnic Institute
February
18-20, 2001
VERSION
4.0
Sunday,
February 18
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Monday,
February 19
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LUNCH with
Committee A, Rm. 131
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(4013 Milford Pl., 364-0375) |
Tuesday,
February 20
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Laboratory
Tour - Sheena Murphy, Rm. 101
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Astronomy
& Astrophysics, Rm. 201
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Rm.
320, x5-0102) Research Rm. 103
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Laboratory
Tour - Eric Abraham, Rm. 125
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Rm. 320 |
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Wednesday,
February 21
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10:50
am DL 5578 departs OKLAHOMA CITY
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Yiping
Zhao
Department
of Physics
Rensselaer
Polytechnic Institute
4:00pm
- 5:00pm Monday February 19
Room 209
Understanding
Growth/Etching Mechanisms from Surface Morphological
Evolution
ABSTRACT
Thin film growth/etching are key processes in microelectronic manufacturing and other applications. As the sizes of microelectronic devices shrink, the surface/interface properties of the film, especially the roughness, play a more and more important role in device fabrication and operation. Therefore, to understand the origin of the roughness, to control the degree of roughness, and to characterize surface roughness during thin film processing are important tasks for research and development. In this talk, I will present how to explore growth/etching mechanisms through the characterization of surface roughness evolution. Two practical examples will be given: the roughening of plasma etch fronts of Si and polymer film growth fronts through vapor deposition. From the roughness evolution, we learn that etchant particle re-emission may be the dominant effect that controls the morphology evolution in the plasma etching process, while monomer bulk diffusion may govern the growth process for polymer growth by vapor deposition.
