 Fig. 1:  STM empty-state (group-III related) cross-sectional image of GaInP/ GaAs interface.  The scan size is 330x560 A2.  Tunneling conditions +3.0 V and tunneling current 10 pA.  The gray-scale range is 0.6 A.   Individual In atoms appear as atomically sharp dots.  Three different areas are delineated by coloured boxes.  Green outlines a region of GaAs, Red outlibes a region of defect free GaInP, and Blue outline a second region of GaInP.
With such a high-quality image it is possible to count atoms and hence index the position of atoms throughout the image.  This was done relative to the large dopant-like defect above the Green box.
Fig. 1:  STM empty-state (group-III related) cross-sectional image of GaInP/ GaAs interface.  The scan size is 330x560 A2.  Tunneling conditions +3.0 V and tunneling current 10 pA.  The gray-scale range is 0.6 A.   Individual In atoms appear as atomically sharp dots.  Three different areas are delineated by coloured boxes.  Green outlines a region of GaAs, Red outlibes a region of defect free GaInP, and Blue outline a second region of GaInP.
With such a high-quality image it is possible to count atoms and hence index the position of atoms throughout the image.  This was done relative to the large dopant-like defect above the Green box.
[Click on figure to enlarge]