Topoelectronic Phases in Thin Films and Organometallic Frameworks
Presented by Dr. Feng Liu, University of Utah
Topological states of matter have been a major subject of interest in condensed matter physics since the discovery of the quantum Hall effects. A possibility was noticed that intrinsic topological states could exist in crystalline materials with strong spin-orbit coupling, and much recent effort has been made in the theoretical prediction and subsequent experimental realization of the so-called topological electronic (topoelectronic) materials. In this talk, I will first introduce and review the existing topoelectronic materials. I will then discuss two specific examples: (1) topoelectronic phase evolution in Bi and Sb thin films as a function of the film thickness; (2) material design of organic topoelectronic materials in 2D organometallic frameworks, including organic topological insulators (OTIs), magnetic OTIs and topological flat-band materials.